Voltage regulator and resonant gate driver thereof

ABSTRACT

The present invention relates to a voltage regulator and a resonant gate driver of the voltage regulator, where the resonant gate driver is configured to drive a first power transistor and a second power transistor and includes: a first control gateway, a second control gateway, and an inductor, where: a first end of the first control gateway is connected to a first end of the second control gateway; a second end of the first control gateway is connected to a second end of the second control gateway by using the inductor; and a third end of the first control gateway is connected to the first power transistor, and a third end of the second control gateway is connected to the second power transistor. The resonant gate driver according to an embodiment of the present invention can reduce a driving period and increase a response speed.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to Chinese Patent Application No.201310733241.2, filed on Dec. 26, 2013, which is hereby incorporated byreference in its entirety.

TECHNICAL FIELD

The present invention relates to the field of semiconductor integratedcircuits, and in particular, to a voltage regulator and a resonant gatedriver of the voltage regulator.

BACKGROUND

Dynamic voltage and frequency scaling (Dynamic voltage and frequencyscaling, DVFS) is a technology that effectively reduces powerconsumption. As density of a design area of a chip increases, a responsespeed, on-chip integration, and energy efficiency become threecorresponding important features of a voltage regulator.

In a basic structure of a voltage regulator, especially in a system witha high on-chip switching frequency, most loss comes from loss of aparasitic capacitor of a power transistor and conduction loss of a bodydiode. Currently, a structure, of a resonant gate driver (Resonant gatedriver), that effectively reduces the foregoing two types of loss hasbeen put forwarded. That is, two PMOS transistors, an affiliated diodeof the PMOS transistors, two NMOS transistors, an affiliated diode ofthe NMOS transistors, and an inductor are used to control turn-on andturn-off of two power transistors. Specifically, a turn-on operation ona power transistor may include a process of charging a parasiticcapacitor of the power transistor and a process of discharging aninductor; and a turn-off operation on the power transistor may include aprocess of discharging the parasitic capacitor of the power transistorand a process of discharging the inductor.

However, as mentioned above, the response speed and on-chip integrationare also important features of the voltage regulator. In addition,generally, higher on-chip integration requires a faster response speed.Therefore, a response speed of a driver of the voltage regulator alsoneeds to be increased.

SUMMARY

To solve the foregoing technical problems, according to an embodiment ofthe present invention, a resonant gate driver is provided and isconfigured to drive a first power transistor and a second powertransistor. The resonant gate driver includes a first control gateway, asecond control gateway, and an inductor, where: a first end of the firstcontrol gateway is connected to a first end of the second controlgateway; a second end of the first control gateway is connected to asecond end of the second control gateway by using the inductor; and athird end of the first control gateway is connected to the first powertransistor, and a third end of the second control gateway is connectedto the second power transistor.

For the foregoing resonant gate driver, in a possible implementationmanner, the first control gateway includes a first switch, a thirdswitch, and a fifth switch, and the second control gateway includes asecond switch, a fourth switch, and a sixth switch, where: a firstcontact of the first switch is connected to a first contact of thesecond switch, and a second contact of the first switch is connected toa second contact of the fifth switch and a first contact of the thirdswitch; a second contact of the second switch is connected to a secondcontact of the sixth switch and a first contact of the fourth switch; asecond contact of the third switch is connected to the first powertransistor; a second contact of the fourth switch is connected to thesecond power transistor; a first contact of the fifth switch and a firstcontact of the sixth switch are grounded; and an end of the inductor isconnected to the second contact of the first switch, and the other endof the inductor is connected to the second contact of the second switch.

For the foregoing resonant gate driver, in a possible implementationmanner, the resonant gate driver further includes a power supply, wherethe power supply is connected to the first contact of the first switchand the first contact of the second switch.

For the foregoing resonant gate driver, in a possible implementationmanner, the first switch, the second switch, the third switch, thefourth switch, the fifth switch, and the sixth switch are allsemiconductor components.

For the foregoing resonant gate driver, in a possible implementationmanner, the semiconductor components are field effect transistors, thefirst contacts of the first switch, the second switch, the third switch,the fourth switch, the fifth switch and the sixth switch are all sourceelectrodes of the field effect transistors, the second contacts of thefirst switch, the second switch, the third switch, the fourth switch,the fifth switch, and the sixth switch are all drain electrodes of thefield effect transistors, and control ends of the first switch, thesecond switch, the third switch, the fourth switch, the fifth switch,and the sixth switch are all gate electrodes of the field effecttransistors.

For the foregoing resonant gate driver, in a possible implementationmanner, the first switch, the second switch, the third switch, and thefourth switch are PMOS transistors, and the fifth switch and the sixthswitch are NMOS transistors.

For the foregoing resonant gate driver, in a possible implementationmanner, the resonant gate driver further includes a first body diode, asecond body diode, a third body diode, a fourth body diode, a fifth bodydiode, and a sixth body diode, where: an anode of the first body diodeis connected to the second contact of the first switch, and a cathode ofthe first body diode is connected to the first contact of the firstswitch; an anode of the second body diode is connected to the secondcontact of the second switch, and a cathode of the second body diode isconnected to the first contact of the second switch; an anode of thethird body diode is connected to the second contact of the third switch,and a cathode of the third body diode is connected to the first contactof the third switch; an anode of the fourth body diode is connected tothe second contact of the fourth switch, and a cathode of the fourthbody diode is connected to the first contact of the fourth switch; ananode of the fifth body diode is connected to the first contact of thefifth switch, and a cathode of the fifth body diode is connected to thesecond contact of the fifth switch; and an anode of the sixth body diodeis connected to the first contact of the sixth switch, and a cathode ofthe sixth body diode is connected to the second contact of the sixthswitch.

To solve the foregoing technical problems, according to anotherembodiment of the present invention, a voltage regulator is provided andincludes: a first power transistor, where a first contact of the firstpower transistor is connected to an end of a power supply; a secondpower transistor, where a first contact of the second power transistoris connected to the other end of the power supply, and a second contactof the second power transistor is connected to a second contact of thefirst power transistor; and a resonant gate driver that uses anystructure in an embodiment of the present invention, where the resonantgate driver is connected to a control end of the first power transistorand a control end of the second power transistor, and is configured todrive the first power transistor and the second power transistor.

For the foregoing voltage regulator, in a possible implementationmanner, the voltage regulator further includes: a feedback inductor, afeedback capacitor, a control circuit, and a modulation circuit, where:an end of the feedback inductor is connected to the second contact ofthe first power transistor, the other end of the feedback inductor isconnected to an end of the feedback capacitor, and the other end of thefeedback capacitor is connected to the first contact of the first powertransistor; the control circuit is connected to the two ends of thefeedback inductor and can generate a control signal according to avoltage of the two ends of the feedback inductor; the modulation circuitis connected to the control circuit and can generate a modulating signalaccording to the control signal; and the resonant gate driver isconnected to the modulation circuit and can drive the first powertransistor and the second power transistor according to the modulatingsignal.

For the foregoing voltage regulator, in a possible implementationmanner, the first power transistor is an NMOS transistor, and the secondpower transistor is a PMOS transistor.

For the foregoing voltage regulator, in a possible implementationmanner, the first contact of the first power transistor is a sourceelectrode of the NMOS transistor, the second contact of the first powertransistor is a drain electrode of the NMOS transistor, and the controlend of the first power transistor is a gate electrode of the NMOStransistor; and the first contact of the second power transistor is asource electrode of the PMOS transistor, the second contact of thesecond power transistor is a drain electrode of the PMOS transistor, andthe control end of the second power transistor is a gate electrode ofthe PMOS transistor.

The resonant gate driver in the embodiments of the present inventionsaves time for two times of inductor discharging in the prior art, andtherefore when compared with the prior art, shortens a driving period byabout 25% and increases a response speed.

Exemplary embodiments are described in detail with reference toaccompanying drawings to make other features and aspects of the presentinvention clearer.

BRIEF DESCRIPTION OF DRAWINGS

Accompanying drawings included in the specification and constructing apart of the specification jointly show the exemplary embodiments,characteristics and aspects of the present invention, and are intendedto explain the principles of the present invention.

FIG. 1 shows a schematic structural diagram of a voltage regulatoraccording to an embodiment of the present invention;

FIG. 2 shows a schematic structural diagram of a resonant gate driveraccording to an embodiment of the present invention;

FIG. 3 shows a specific circuit structural diagram of a resonant gatedriver according to an embodiment of the present invention;

FIG. 4a to FIG. 4c show schematic diagrams of a procedure in which aresonant gate driver drives a power transistor to turn on and turn offaccording to an embodiment of the present invention;

FIG. 5a to FIG. 5c show schematic diagrams of a procedure in which aresonant gate driver drives another power transistor to turn on and turnoff according to an embodiment of the present invention; and

FIG. 6 shows a schematic diagram of comparison between a driving periodof a resonant gate driver according to an embodiment of the presentinvention and that of a resonant gate driver in the prior art.

DESCRIPTION OF EMBODIMENTS

The following describes, with reference to the accompanying drawings,various exemplary embodiments, features, and aspects of the presentinvention in detail. A same mark in the accompanying drawings indicatesa same function or a similar component. Though various aspects of theembodiments are shown in the accompanying drawings, unless otherwisespecified, the accompanying drawings do not need to be drawnproportionally.

The specific term “exemplary” herein means “used as an example,embodiment or illustrative”. Any embodiment described as “exemplary” isnot necessarily explained as being superior or better than otherembodiments.

In addition, for better description of the present invention, a lot ofspecific details are provided in the following specific implementationmanners A person of ordinary skill in the art should understand that thepresent invention may also be implemented without the specific details.In another some embodiments, common methods, means, components, andcircuits are not described in detail for the convenience of highlightingthe major idea of the present invention.

A resonant gate driver in an embodiment of the present invention isconfigured to drive a first power transistor and a second powertransistor and may perform, by controlling a time ratio of connectionand disconnection of the two power transistors in a voltage regulatorshown in FIG. 1, pulse modulation on an input voltage Vi, thereby makingan output voltage Vo adjustable and maintain stable, where a first powertransistor 110 shown in FIG. 1 may be specifically an NMOS transistor,and a second power transistor 120 may be specifically a PMOS transistor.

FIG. 2 shows a schematic structural diagram of a resonant gate driveraccording to an embodiment of the present invention. As shown in FIG. 2,the resonant gate driver mainly includes a first control gateway 210, asecond control gateway 220, and an inductor L_(R), where: a first end ofthe first control gateway 210 is connected to a first end of the secondcontrol gateway 220; a second end of the first control gateway 210 isconnected to a second end of the second control gateway 220 by using theinductor L_(R); and a third end of the first control gateway 210 isconnected to a first power transistor 110, and a third end of the secondcontrol gateway 220 is connected to a second power transistor 120.

By using a control gateway 150 and a modulation circuit 140 that aredescribed in FIG. 1, an intensity of a current that passes through thefirst control gateway 210 and the second control gateway 220 of theresonant gate driver in the present invention may be controlled.Therefore, connection and disconnection of the first power transistor110 and the second power transistor 120 can be controlled and pulsemodulation on an input voltage Vi shown in FIG. 1 is implemented.

In a possible implementation manner, a specific circuit structuraldiagram of the resonant gate driver in an embodiment of the presentinvention is shown in FIG. 3. The first control gateway 210 includes afirst switch S₁, a third switch S₃, and a fifth switch S₅, and thesecond control gateway 220 includes a second switch S₂, a fourth switchS₄, and a sixth switch S₆, where: a first contact of the first switch S₁is connected to a first contact of the second switch S₂, and a secondcontact of the first switch S₁ is connected to a second contact of thefifth switch S₅ and a first contact of the third switch S₃; a secondcontact of the second switch S₂ is connected to a second contact of thesixth switch S₆ and a first contact of the fourth switch S₄; a secondcontact of the third switch S₃ is connected to the first powertransistor 110; a second contact of the fourth switch S₄ is connected tothe second power transistor 120; a first contact of the fifth switch S₅and a first contact of the sixth switch S₆ are grounded; and an end ofthe inductor L_(R) is connected to the second contact of the firstswitch S₁, and the other end of the inductor L_(R) is connected to thesecond contact of the second switch S₂.

In a possible implementation manner, as shown in FIG. 3, the resonantgate driver according to an embodiment of the present invention mayfurther include a power supply U, where the power supply U is connectedto the first contact of the first switch S₁ and the first contact of thesecond switch S₂.

In a possible implementation manner, the first switch S₁, the secondswitch S₂, the third switch S₃, the fourth switch S₄, the fifth switchS₅ and the sixth switch S₆ are all semiconductor components. In apossible implementation manner, the semiconductor components are fieldeffect transistors, the first contacts of the first switch S₁, thesecond switch S₂, the third switch S₃, the fourth switch S₄, the fifthswitch S₅ and the sixth switch S₆ are all source electrodes of the fieldeffect transistors, the second contacts of the first switch S₁, thesecond switch S₂, the third switch S₃, the fourth switch S₄, the fifthswitch S₅ and the sixth switch S₆ are all drain electrodes of the fieldeffect transistors, control ends of the first switch S₁, the secondswitch S₂, the third switch S₃, the fourth switch S₄, the fifth switchS₅ and the sixth switch S₆ are all gate electrodes of the field effecttransistors, and the gate electrodes are connected to the modulationcircuit 140 shown in FIG. 1, and can be controlled by the controlgateway 150 by using the modulation circuit 140.

In a possible implementation manner, the first switch S₁, the secondswitch S₂, the third switch S₃, and the fourth switch S₄ are PMOStransistors, and the fifth switch S₅ and the sixth switch S₆ are NMOStransistors.

In a possible implementation manner, as shown in FIG. 3, the resonantgate driver according to an embodiment of the present invention mayfurther include a first body diode D₁, a second body diode D₂, a thirdbody diode D₃, a fourth body diode D₄, a fifth body diode D₅, and asixth body diode D₆, where: an anode of the first body diode D₁ isconnected to the second contact of the first switch S₁, and a cathode ofthe first body diode D₁ is connected to the first contact of the firstswitch S₁; an anode of the second body diode D₂ is connected to thesecond contact of the second switch S₂, and a cathode of the second bodydiode D₂ is connected to the first contact of the second switch S₂; ananode of the third body diode D₃ is connected to the second contact ofthe third switch S₃, and a cathode of the third body diode D₃ isconnected to the first contact of the third switch S₃; an anode of thefourth body diode D₄ is connected to the second contact of the fourthswitch S₄, and a cathode of the fourth body diode D₄ is connected to thefirst contact of the fourth switch S₄; an anode of the fifth body diodeD₅ is connected to the first contact of the fifth switch S₅, and acathode of the fifth body diode D₅ is connected to the second contact ofthe fifth switch S₅; and an anode of the sixth body diode D₆ isconnected to the first contact of the sixth switch S₆, and a cathode ofthe sixth body diode D₆ is connected to the second contact of the sixthswitch S₆. Existence of the body diodes may reduce reverse loss in acircuit and can achieve a purpose of protecting the switches.

FIG. 4a to FIG. 4c show diagrams of a simplified procedure in which theresonant gate deriver turns on and turns off the first power transistor110 according to an embodiment of the present invention. Specifically,FIG. 4a is a process of turning on the first power transistor 110, thatis, charging a parasitic capacitor C1 of the first power transistor 110.By controlling a voltage of the control end of the second switch S2, thesecond switch S2 is connected, and therefore the parasitic capacitor C1can be charged. After a period of time, the power transistor 110 isconnected when a voltage of a gate electrode of the first powertransistor 110 exceeds a threshold voltage. Then, as shown in FIG. 4b ,FIG. 4b is a process of discharging the inductor LR, where energy of theinductor LR is returned to the power supply U in this process, which cansave energy. FIG. 4c is a process of turning off the power transistor110, that is, a process of discharging the parasitic capacitor C1 of thefirst power transistor 110. By controlling a voltage of the control endof the sixth switch S6, the sixth switch S6 is connected, and thereforethe parasitic capacitor C1 can be discharged by using the inductor LR.FIG. 5a to FIG. 5c show diagrams of a simplified procedure of a processin which the second power transistor 120 is turned on and turned off,that is, a process in which the parasitic capacitor C₂ of the secondpower transistor 120 is charged and discharged. For a detailedprocedure, reference may be made to the foregoing procedure of turningon and turning off the first power transistor 110.

It should be noted that connection and disconnection of all the firstswitch S₁, the second switch S₂, the third switch S₃, the fourth switchS₄, the fifth switch S₅ and the sixth switch S₆ may be logicallycontrolled by the modulation circuit 140. When a voltage of the controlend of the foregoing switch is logically controlled at a high level, theswitch is connected; and when the voltage of the control end of theforegoing switch is logically controlled at a low level, the switch isdisconnected. In an actual application, a moment when the control end ofeach of the foregoing switches needs to be controlled at a high level ora low level may be preset in the modulation circuit 140 according to anactual requirement. In addition, a person skilled in the art shouldunderstand that the foregoing switches may also be switch tubes thathave a similar function.

In a driving period of the voltage regulator shown in FIG. 1, theresonant gate driver in this embodiment needs to perform a turn-onoperation and a turn-off operation on power transistors twice, that is,turn on the first power transistor 110 and turn off the first powertransistor 110, and turn on the second power transistor 120 and turn offthe second power transistor 120.

According to the foregoing analysis, driving a single power transistorby the resonant gate driver in this embodiment may be concluded as thefollowing three steps, and in a driving period, the following steps areperformed twice:

-   -   step 01: a process of charging the parasitic capacitor.    -   step 02: Discharge the inductor and return energy.    -   step 03: Discharge the parasitic capacitor and store energy of        the inductor.

Driving a single power transistor by using a structure of an existingresonant gate driver described in the BACKGROUND may be concluded as thefollowing four steps, and in a driving period, the following steps areperformed twice:

-   -   step 11: a process of charging the parasitic capacitor;    -   step 12: Discharge the inductor and return energy;    -   step 13: Discharge the parasitic capacitor and store energy of        the inductor; and    -   step 14: Discharge the inductor and return energy.

If 50 ns is used as a step unit of a driving period of the resonant gatedriver, a simulation test on power transistor driving by the resonantgate driver in the prior art and the resonant gate driver in thisembodiment of the present invention is performed, and a schematicdiagram of comparison between driving periods of two structures may beobtained. As shown in FIG. 6, it may be seen that the resonant gatedriver in this embodiment of the present invention saves time of twotimes of inductor discharging in the prior art, and therefore whencompared with the prior art, shortens the driving period by about 25%and increases a response speed. In addition, compared with the priorart, the resonant gate driver in this embodiment of the presentinvention reduces a step of driving the power resonant, and thereforecan reduce complexity of a logical unit that is responsible forcontrolling a switch of the resonant gate driver.

It should be noted that, although a driving circuit that is applied to avoltage regulator is used as an example to describe the resonant gatedriver put forward in the present invention, a person skilled in the artshould understand that an application scenario of the present inventionshould not be limited thereto. The new-type resonant gate driver putforward in the present invention can also be applied to another similarcircuit, for example, a driving circuit of a power switch component. Inaddition, although the foregoing embodiment uses FIG. 4a to FIG. 4c andFIG. 5a to FIG. 5c as an example to describe in detail a possibleimplementation manner of the resonant gate driver in the presentinvention, a person skilled in the art should understand that a specificcurrent direction of the resonant gate driver in the present inventionshould not be limited thereto, and a logical level value of the controlend of each switch can be flexibly set according to an applicationscenario. All structures that use the resonant gate driver described inthe claims shall fall within a scope of the present invention.

FIG. 1 shows a structural diagram of a voltage regulator according to anembodiment of the present invention. The voltage regulator may include afirst power transistor 110, a second power transistor 120, and aresonant gate driver 130, where: a first contact of the first powertransistor 110 is connected to an end of a power supply E; a firstcontact of the second power transistor 120 is connected to the other endof the power supply E, and a second contact of the second powertransistor 120 is connected to a second contact of the first powertransistor 110; and the resonant gate driver 130 is connected to acontrol end of the first power transistor 110 and a control end of thesecond power transistor 120 by using a circuit structure described inthe foregoing embodiment of the present invention, and can drive turn-onand turn-off of the first power transistor 110 and the second powertransistor 120.

In a possible implementation manner, the voltage regulator furtherincludes: a feedback inductor L, a feedback capacitor C, a controlcircuit 150, and a modulation circuit 140, where: an end of the feedbackinductor L is connected to the second contact of the first powertransistor 110, the other end of the feedback inductor L is connected toan end of the feedback capacitor C, and the other end of the feedbackcapacitor C is connected to the first contact of the first powertransistor 110; the control circuit 150 is connected to the two ends ofthe feedback inductor L and can generate a control signal according to avoltage of the two ends of the feedback inductor L; the modulationcircuit 140 is connected to the control circuit 150 and can generate amodulating signal according to the control signal; and the resonant gatedriver 130 is connected to the modulation circuit 140 and can drive thefirst power transistor 110 and the second power transistor 120 accordingto the modulating signal.

In a possible implementation manner, the first power transistor 110 isan NMOS transistor, and the second power transistor 120 is a PMOStransistor.

In a possible implementation manner, the first contact of the firstpower transistor is a source electrode of the NMOS transistor, thesecond contact of the first power transistor 110 is a drain electrode ofthe NMOS transistor, the control end of the first power transistor 110is a gate electrode of the NMOS transistor; and the first contact of thesecond power transistor 120 is a source electrode of the PMOStransistor, the second contact of the second power transistor 120 is adrain electrode of the PMOS transistor, and the control end of thesecond power transistor 120 is a gate electrode of the PMOS transistor.

For control on the first power transistor 110 and the second powertransistor 120 by the resonant gate driver 130, reference may bespecifically made to the foregoing embodiment and descriptions from FIG.4a to FIG. 4c and from FIG. 5a to FIG. 5c . By controlling connectionand disconnection of the first power transistor 110 and the second powertransistor 120, pulse modulation is implemented on an input voltage Vishown in FIG. 1.

In addition, it should be noted that, when the resonant gate driver witha structure shown in FIG. 3 is used, connection and disconnection of thefirst switch S₁, the second switch S₂, the third switch S₃, the fourthswitch S₄, the fifth switch S₅ and the sixth switch S₆ in the resonantgate driver may be logically controlled by the modulation circuit 140.That is, when a voltage of the control end of the foregoing switch islogically controlled at a high level, the switch is connected; and whenthe voltage of the control end of the foregoing switch is logicallycontrolled at a low level, the switch is disconnected. In an actualapplication, a moment when the control end of each of the foregoingswitches needs to be controlled at a high level or a low level may bepreset in the modulation circuit 140 according to an actual requirement.

A voltage regulator in this embodiment uses a resonant gate driverdescribed in the foregoing embodiment of the present invention and canincrease a response speed, which is more helpful to on-chip integrationof the voltage regulator. In addition, the voltage regulator in thisembodiment of the present invention can reduce complexity of a logicalunit, that is, a modulation circuit, that is responsible for controllinga switch of the resonant gate driver.

The foregoing descriptions are merely specific implementation manners ofthe present invention, but are not intended to limit the protectionscope of the present invention. Any variation or replacement readilyfigured out by a person skilled in the art within the technical scopedisclosed in the present invention shall fall within the protectionscope of the present invention. Therefore, the protection scope of thepresent invention shall be subject to the protection scope of theclaims.

What is claimed is:
 1. A resonant gate driver of a voltage regulatorconfigured to drive a first power transistor and a second powertransistor, wherein the resonant gate driver comprises a first controlgateway, a second control gateway, and an inductor, wherein: a first endof the first control gateway is connected to a first end of the secondcontrol gateway; a second end of the first control gateway is connectedto a second end of the second control gateway via the inductor; and athird end of the first control gateway is connected to the first powertransistor, and a third end of the second control gateway is connectedto the second power transistor; wherein the first end of the firstcontrol gateway and the first end of the second control gateway areconnected to a modulation circuit of the voltage regulator, themodulation circuit being connected to a control circuit of the voltageregulator; wherein the modulation circuit and the control circuit areconfigured to control an intensity of a current passing through thefirst control gateway and the second control gateway to control a timeratio of connection and disconnection of the first power transistor andthe second power transistor, so as to perform pulse modulation on aninput voltage of the voltage regulator to keep an output voltage of thevoltage regulator stable.
 2. The resonant gate driver according to claim1, wherein the first control gateway comprises a first switch, a thirdswitch, and a fifth switch, and the second control gateway comprises asecond switch, a fourth switch, and a sixth switch, wherein: a firstcontact of the first switch is connected to a first contact of thesecond switch, and a second contact of the first switch is connected toa second contact of the fifth switch and a first contact of the thirdswitch; a second contact of the second switch is connected to a secondcontact of the sixth switch and a first contact of the fourth switch; asecond contact of the third switch is connected to the first powertransistor; a second contact of the fourth switch is connected to thesecond power transistor; a first contact of the fifth switch and a firstcontact of the sixth switch are grounded; and an end of the inductor isconnected to the second contact of the first switch, and the other endof the inductor is connected to the second contact of the second switch.3. The resonant gate driver according to claim 2, further comprising apower supply, wherein the power supply is connected to the first contactof the first switch and the first contact of the second switch.
 4. Theresonant gate driver according to claim 2, wherein the first switch, thesecond switch, the third switch, the fourth switch, the fifth switch,and the sixth switch are all semiconductor components.
 5. The resonantgate driver according to claim 4, wherein the semiconductor componentsare field effect transistors, the first contacts of the first switch,the second switch, the third switch, the fourth switch, the fifth switchand the sixth switch are all source electrodes of the field effecttransistors, the second contacts of the first switch, the second switch,the third switch, the fourth switch, the fifth switch, and the sixthswitch are all drain electrodes of the field effect transistors, andcontrol ends of the first switch, the second switch, the third switch,the fourth switch, the fifth switch, and the sixth switch are all gateelectrodes of the field effect transistors.
 6. The resonant gate driveraccording to claim 5, wherein the first switch, the second switch, thethird switch, and the fourth switch are p-type metal-oxide-semiconductor(PMOS) transistors, and the fifth switch and the sixth switch are n-typemetal-oxide-semiconductor (NMOS) transistors.
 7. The resonant gatedriver according to claim 6, further comprising a first body diode, asecond body diode, a third body diode, a fourth body diode, a fifth bodydiode, and a sixth body diode, wherein: an anode of the first body diodeis connected to the second contact of the first switch, and a cathode ofthe first body diode is connected to the first contact of the firstswitch; an anode of the second body diode is connected to the secondcontact of the second switch, and a cathode of the second body diode isconnected to the first contact of the second switch; an anode of thethird body diode is connected to the second contact of the third switch,and a cathode of the third body diode is connected to the first contactof the third switch; an anode of the fourth body diode is connected tothe second contact of the fourth switch, and a cathode of the fourthbody diode is connected to the first contact of the fourth switch; ananode of the fifth body diode is connected to the first contact of thefifth switch, and a cathode of the fifth body diode is connected to thesecond contact of the fifth switch; and an anode of the sixth body diodeis connected to the first contact of the sixth switch, and a cathode ofthe sixth body diode is connected to the second contact of the sixthswitch.
 8. A voltage regulator, comprising: a first power transistor,wherein a first contact of the first power transistor is connected to anend of a power supply; a second power transistor, wherein a firstcontact of the second power transistor is connected to the other end ofthe power supply, and a second contact of the second power transistor isconnected to a second contact of the first power transistor; and aresonant gate driver, wherein the resonant gate driver is connected to acontrol end of the first power transistor and a control end of thesecond power transistor, and is configured to drive the first powertransistor and the second power transistor; wherein the resonant gatedriver comprises a first control gateway, a second control gateway, andan inductor, and wherein: a first end of the first control gateway isconnected to a first end of the second control gateway; a second end ofthe first control gateway is connected to a second end of the secondcontrol gateway via the inductor; and a third end of the first controlgateway is connected to the first power transistor, and a third end ofthe second control gateway is connected to the second power transistor;wherein the first end of the first control gateway and the first end ofthe second control gateway are connected to a modulation circuit of thevoltage regulator, the modulation circuit being connected to a controlcircuit of the voltage regulator; wherein the modulation circuit and thecontrol circuit are configured to control an intensity of a currentpassing through the first control gateway and the second control gatewayto control a time ratio of connection and disconnection of the firstpower transistor and the second power transistor, so as to perform pulsemodulation on an input voltage of the voltage regulator to keep anoutput voltage of the voltage regulator stable.
 9. The voltage regulatoraccording to claim 8, further comprising: a feedback inductor, and afeedback capacitor, wherein: an end of the feedback inductor isconnected to the second contact of the first power transistor, the otherend of the feedback inductor is connected to an end of the feedbackcapacitor, and the other end of the feedback capacitor is connected tothe first contact of the first power transistor; the control circuit isconnected to the two ends of the feedback inductor and is configured togenerate a control signal according to a voltage corresponding to thetwo ends of the feedback inductor; the modulation circuit is connectedto the control circuit and is configured to generate a modulating signalaccording to the control signal; and the resonant gate driver isconnected to the modulation circuit and is configured to drive the firstpower transistor and the second power transistor according to themodulating signal.
 10. The voltage regulator according to claim 8,wherein the first power transistor is an n-typemetal-oxide-semiconductor (NMOS) transistor, and the second powertransistor is a p-type metal-oxide-semiconductor (PMOS) transistor. 11.The voltage regulator according to claim 10, wherein: the first contactof the first power transistor is a source electrode of the NMOStransistor, the second contact of the first power transistor is a drainelectrode of the NMOS transistor, and the control end of the first powertransistor is a gate electrode of the NMOS transistor; and the firstcontact of the second power transistor is a source electrode of the PMOStransistor, the second contact of the second power transistor is a drainelectrode of the PMOS transistor, and the control end of the secondpower transistor is a gate electrode of the PMOS transistor.
 12. Thevoltage regulator according to claim 8, wherein the first controlgateway comprises a first switch, a third switch, and a fifth switch,and the second control gateway comprises a second switch, a fourthswitch, and a sixth switch, wherein: a first contact of the first switchis connected to a first contact of the second switch, and a secondcontact of the first switch is connected to a second contact of thefifth switch and a first contact of the third switch; a second contactof the second switch is connected to a second contact of the sixthswitch and a first contact of the fourth switch; a second contact of thethird switch is connected to the first power transistor; a secondcontact of the fourth switch is connected to the second powertransistor; a first contact of the fifth switch and a first contact ofthe sixth switch are grounded; and an end of the inductor is connectedto the second contact of the first switch, and the other end of theinductor is connected to the second contact of the second switch. 13.The voltage regulator according to claim 12, further comprising a powersupply, wherein the power supply is connected to the first contact ofthe first switch and the first contact of the second switch.
 14. Thevoltage regulator, according to claim 12, wherein the first switch, thesecond switch, the third switch, the fourth switch, the fifth switch,and the sixth switch are all semiconductor components.
 15. The voltageregulator according to claim 14, wherein the semiconductor componentsare field effect transistors, the first contacts of the first switch,the second switch, the third switch, the fourth switch, the fifth switchand the sixth switch are all source electrodes of the field effecttransistors, the second contacts of the first switch, the second switch,the third switch, the fourth switch, the fifth switch, and the sixthswitch are all drain electrodes of the field effect transistors, andcontrol ends of the first switch, the second switch, the third switch,the fourth switch, the fifth switch, and the sixth switch are all gateelectrodes of the field effect transistors.
 16. The voltage regulatoraccording to claim 15, wherein the first switch, the second switch, thethird switch, and the fourth switch are p-type metal-oxide-semiconductor(PMOS) transistors, and the fifth switch and the sixth switch are n-typemetal-oxide-semiconductor (NMOS) transistors.
 17. The voltage regulatoraccording to claim 16, further comprising a first body diode, a secondbody diode, a third body diode, a fourth body diode, a fifth body diode,and a sixth body diode, wherein: an anode of the first body diode isconnected to the second contact of the first switch, and a cathode ofthe first body diode is connected to the first contact of the firstswitch; an anode of the second body diode is connected to the secondcontact of the second switch, and a cathode of the second body diode isconnected to the first contact of the second switch; an anode of thethird body diode is connected to the second contact of the third switch,and a cathode of the third body diode is connected to the first contactof the third switch; an anode of the fourth body diode is connected tothe second contact of the fourth switch, and a cathode of the fourthbody diode is connected to the first contact of the fourth switch; ananode of the fifth body diode is connected to the first contact of thefifth switch, and a cathode of the fifth body diode is connected to thesecond contact of the fifth switch; and an anode of the sixth body diodeis connected to the first contact of the sixth switch, and a cathode ofthe sixth body diode is connected to the second contact of the sixthswitch.